Sample 34

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
11	5	Si wafer - not bonded	50	0	5.0	15	500	20	10	34.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 9.037 um
Calculated remaining resist as 8.99um, indicating an erosion of -0.25um in 10 minutes of etching
This equates to an erosion rate of -25 nm/min
The etch depth of 0.05um in 10 mins indicates an etch rate of 5.0nm/min
The selectivity is therefore -0.20:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	9.037100
Remaining resist (um)	8.987100
Semiconductor etched(um)	0.050000
Etch rate (nm/min)	5.000000
Erosion rate (nm/min)	-24.610000
Selectivity	-0.203169