Sample 34

Run Data

Process carrier HBr Ar Pressure mT RF Power ICP power Temp Time (min) Sample# Res C
11 5 Si wafer - not bonded 50 0 5.0 15 500 20 10 34.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 9.037 um
Calculated remaining resist as 8.99um, indicating an erosion of -0.25um in 10 minutes of etching
This equates to an erosion rate of -25 nm/min
The etch depth of 0.05um in 10 mins indicates an etch rate of 5.0nm/min
The selectivity is therefore -0.20:1
Result
Initial resist (um) 8.741000
Total depth after etch (um) 9.037100
Remaining resist (um) 8.987100
Semiconductor etched(um) 0.050000
Etch rate (nm/min) 5.000000
Erosion rate (nm/min) -24.610000
Selectivity -0.203169